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| SavantIC Semiconductor www..com Product Specification Silicon PNP Power Transistors 2SA1718 www..com DESCRIPTION *With TO-220F package *High DC current gain. *Low collector saturation voltage. *DARLINGTON APPLICATIONS *Ideal for motor drviers and solenoid drivers application PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.0 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -5 -10 -0.5 20 W UNIT V V V A A A SavantIC Semiconductor www..com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SA1718 www..com SYMBOL TYP. MAX UNIT V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Collector-emitter breakdown voltage IC=-30mA; IB=0 IC=-2A ; IB=-2mA IC=-2A ; IB=-2mA VCB=-100V;IE=0 VEB=-7V;IC=0 IC=-2A ; VCE=-2V IC=-4A ; VCE=-2V -100 V Collector-emitter saturation voltage -1.5 V Base-emitter saturation voltage -2.0 V Collector cut-off current -10 A Emitter cut-off current -5.0 mA DC current gain 2000 20000 DC current gain 500 hFE classifications M 2000-5000 L 4000-10000 K 8000-20000 2 SavantIC Semiconductor www..com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1718 www..com Fig.2 Outline dimensions 3 |
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